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| DC COMPONENTS CO., LTD. R MID117 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers. TO-251 .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 .284(7.20) .268(6.80) Pinning 1 = Base 2 = Collector 3 = Emitter .022(0.55) .018(0.45) .063(1.60) .055(1.40) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -100 -100 -5 -2 25 +150 -55 to +150 Unit V V V A W o o .032 Max (0.80) .035 Max (0.90) 1 2 3 .059(1.50) .035(0.90) .256 Min (6.50) .024(0.60) .018(0.45) .181 Typ (4.60) .095(2.40) .087(2.20) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO ICBO ICEO IEBO VCE(sat)1 VCE(sat)2 VBE(sat) VBE(on) hFE1 hFE2 hFE3 Cob 380s, Duty Cycle 2% Min -100 -100 500 1K 200 - Typ - Max -10 -20 -2 -2 -3 -4 -2.8 12K 200 Unit V V A A mA V V V V pF Test Conditions IC=-1mA IC=-30mA VCB=-80V VCE=-50V VBE=-5V IC=-2A, IB=-8mA IC=-4A, IB=-80mA IC=-4A, IB=-40mA IC=-2A, VCE=-4V IC=-0.5A, VCE=-3V IC=-2A, VCE=-3V IC=-4A, VCE=-3V VCB=-10V, f=0.1MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Output Capacitance (1)Pulse Test: Pulse Width |
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